Electron transport in InAs/AlGaSb ballistic rectifiers
نویسندگان
چکیده
منابع مشابه
Electron transport in InAs/AlGaSb ballistic rectifiers
Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have bee...
متن کاملMesoscopic rectifiers based on ballistic transport.
Recent experiments on symmetry-broken mesoscopic semiconductor structures have exhibited an amazing rectifying effect in the transverse current-voltage characteristics with promising prospects for future applications. We present a simple microscopic model, which takes into account the energy dependence of current-carrying modes and explains the rectifying effect by an interplay of fully quantiz...
متن کاملQuasi-ballistic-electron transport in random superlattices.
We theoretically study electron transport in disordered, quantum-well based, semiconductor superlattices with structural short-range correlations. Our system consists of equal width square barriers and quantum wells with two different thicknesses. The two kinds of quantum wells are randomly distributed along the growth direction. Structural correlations are introduced by adding the constraint t...
متن کاملBallistic electron transport in stubbed quantum waveguides: experiment and theory
We present results of experimental and theoretical investigations of electron transport through stub-shaped waveguides or electron stub tuners (ESTs) in the ballistic regime. Measurements of the conductance G as a function of voltages, applied to different gates Vi (i =bottom, top, and side) of the device, show oscillations in the region of the first quantized plateau which we attribute to refl...
متن کاملBallistic Electron Transport in Nanoscale Three-Branch Junctions
Presented here is an experimental study on a novel electron device utilizing ballistic electron transport. This device is a three-terminal structure comprised of lithographically defined Y-shaped two-dimensional electron gas (2DEG) in a compound semiconductor heterostructure. Ballistic electron transport causes a nonlinear input-output transfer curve, which can be exploited for signal rectifica...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2006
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/38/1/028